The effect of a static magnetic field on buoyancy-aided silicon dissolution into germanium melt

被引：14

作者：

Armour, Neil ^{[1
]}

Dost, Sadik ^{[1
]}

机构：

[1] Univ Victoria, Crystal Growth Lab, Victoria, BC V8W 3P6, Canada

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 306卷 / 01期

关键词：

convection; diffusion; magnetic fields; semiconducting silicon and germanium;

D O I：

10.1016/j.jcrysgro.2007.04.033

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effect of a static magnetic field on silicon dissolution into the germanium melt has been experimentally investigated. The experiments in this study show a trend to higher dissolution in the presence of an applied magnetic field. This can be attributed to the flow structure of the melt. The dissolution interface showed improved stability compared with experiments conducted without an applied field. The homogeneity of the dissolved silicon in the melt was reduced. Areas of low silicon concentration were present in the melt. Despite this, more silicon was dissolved into the melt with a static magnetic field applied than in experiments without an applied magnetic field. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：200 / 207

页数：8

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