Impact of buffer growth on crystalline quality of GaN grown on Si(111) substrates

被引：33

作者：

Drechsel, Philipp ^{[1
,2
]}

Stauss, Peter ^{[1
]}

Bergbauer, Werner ^{[1
]}

Rode, Patrick ^{[1
]}

Fritze, Stephanie ^{[3
]}

Krost, Alois ^{[3
]}

Markurt, Toni ^{[4
]}

Schulz, Tobias ^{[4
]}

Albrecht, Martin ^{[4
]}

Riechert, Henning ^{[2
]}

Steegmueller, Ulrich ^{[1
]}

机构：

[1] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany

[2] Paul Drude Inst Solid State Elect, D-10117 Berlin, Germany

[3] Univ Magdeburg, D-39106 Magdeburg, Germany

[4] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 03期

关键词：

defect density; GaN; MOCVD; silicon;

D O I：

10.1002/pssa.201100477

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work we focus on the impact of different buffer and nucleation layers on the corresponding crystalline quality of gallium nitride (GaN), grown by metal-organic chemical vapour deposition (MOCVD). In situ curvature measurements, X-ray diffraction (XRD) and transmission electron microscopy (TEM) are used for advanced characterization. The influence of various growth modes on meltback etching and cracking is analyzed. Also the effect of a silicon nitride (SiN) mask on the growth of GaN and its coalescence is investigated. Furthermore, associated potential consequences for the growth of aluminium nitride (AlN) interlayers are examined to obtain a homogeneous surface without cracks and with good crystalline quality. Our studies indicate that an incomplete coalesced GaN surface located underneath the AlN interlayer leads to an increased defect density. Additionally we studied the influence of growth temperature at nucleation on the material quality and the process stability. Finally we demonstrate interlayer induced compressive strain during GaN growth with an XRD rocking-curve full width half maximum (FWHM) as low as 450 arc seconds for the 10 (1) over bar2 reflection. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim\

引用

页码：427 / 430

页数：4

共 9 条

[1] Stress and defect control in GaN using low temperature interlayers [J].

Amano, H ;

Iwaya, M ;

Kashima, T ;

Katsuragawa, M ;

Akasaki, I ;

Han, J ;

Hearne, S ;

Floro, JA ;

Chason, E ;

Figiel, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (12B) :L1540-L1542

[2] Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1 μm in thickness [J].

Dadgar, A ;

Bläsing, J ;

Diez, A ;

Alam, A ;

Heuken, M ;

Krost, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (11B) :L1183-L1185

[3]

Dadgar A, 2002, PHYS STATUS SOLIDI A, V192, P308, DOI 10.1002/1521-396X(200208)192:2<308::AID-PSSA308>3.0.CO

[4]

2-M

[5] Raman determination of phonon deformation potentials in alpha-GaN [J].

Demangeot, F ;

Frandon, J ;

Renucci, MA ;

Briot, O ;

Gil, B ;

Aulombard, RL .

SOLID STATE COMMUNICATIONS, 1996, 100 (04) :207-210

[6] Strain controlled growth of crack-free GaN with low defect density on silicon (111) substrate [J].

Drechsel, P. ;

Riechert, H. .

JOURNAL OF CRYSTAL GROWTH, 2011, 315 (01) :211-215

[7]

Frayssinet F., 2011, PHYS STATUS SOLIDI C, V8, P1479

[8] Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks [J].

Hertkorn, J. ;

Lipski, F. ;

Brueckner, R. ;

Wunderer, T. ;

Thapa, S. B. ;

Scholz, F. ;

Chuvilin, A. ;

Kaiser, U. ;

Beer, M. ;

Zweck, J. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) :4867-4870

[9] Solid-state lighting: an energy-economics perspective [J].

Tsao, J. Y. ;

Saunders, H. D. ;

Creighton, J. R. ;

Coltrin, M. E. ;

Simmons, J. A. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (35)

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