Physics-Based Model of IGBT Including MOS Side Two-Dimensional Effects

被引：0

作者：

Lu, L. ^{[1
]}

Bryant, A. ^{[2
]}

Santi, E. ^{[1
]}

Hudgins, J. L. ^{[3
,4
]}

Palmer, P. R.

机构：

[1] Univ South Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

[3] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

[4] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

CONFERENCE RECORD OF THE 2006 IEEE INDUSTRY APPLICATIONS CONFERENCE, FORTY-FIRST IAS ANNUAL MEETING, VOL 1-5 | 2006年

关键词：

Power semiconductor modeling; IGBT model; physics-based model;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An existing physics-based model, which has proven accurate for inductive turn-off and inductive turn-on simulations, is modified to account for lateral-gate IGBT two-dimensional effects at the MOS end of the drift region. The modification is based on a steady-state solution of carrier distribution in the JFET region of the IGBT. The accuracy of this solution is verified through a set of finite-element simulations. The improved accuracy of the modified model in terms of on-state forward drop and voltage tail at turn-on is verified through comparison with experimental results.

引用

页码：1457 / 1464

页数：8

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