Ultrafast dynamics in photoexcited valence-band states of Si studied by time- and angle-resolved photoemission spectroscopy of bulk direct transitions

被引：6

作者：

Kanasaki, Jun'ichi ^{[1
]}

Tanimura, Hiroshi ^{[2
,4
]}

Tanimura, Katsumi ^{[1
,2
]}

Ries, Philip ^{[3
]}

Heckel, Wolfgang ^{[3
]}

Biedermann, Kerstin ^{[3
]}

Fauster, Thomas ^{[3
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Mihogaoka 8-1, Suita, Osaka 5670047, Japan

[2] Osaka Univ, Res Ctr Ultra High Voltage Electron Microscopy, Mihogaoka 7-1, Suita, Osaka 5670047, Japan

[3] Univ Erlangen Nurnberg, Lehrstuhl Festkorperphys, Staudtstr 7, D-91058 Erlangen, Germany

[4] Tohoku Univ, Inst Mat Res, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan

来源：

PHYSICAL REVIEW B | 2018年 / 97卷 / 03期

关键词：

ELECTRONIC-STRUCTURE; QUANTUM KINETICS; QUASI-PARTICLE; PHOTON-ECHOES; SEMICONDUCTORS; THERMALIZATION; TRANSPORT; SILICON; PROBE; GAAS;

D O I：

10.1103/PhysRevB.97.035201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We identify direct-transition photoemission peaks from the bulk valence bands of Si in energy- and momentum-resolved photoemission from Si(111)-(7-7) using polarized 6-eV laser light. Time-resolved study of spectral line shapes of the peaks under interband excitation by 2-eV femtosecond-laser pulses shows the ultrafast transient spectral-width broadening and its recovery associated with a low-energy peak shift. The changes reveal the dynamics of screening effects by electron-hole plasma, hot-hole relaxation, and band renormalization in photoexcited Si, showing strong many-body effects in relaxation at excitation density less than 10(18) cm(-3).

引用

页数：6

共 38 条

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