Field-free spin Hall effect driven magnetization switching in Pd/Co/IrMn exchange coupling system

被引：58

作者：

Kong, W. J. ^{[1
]}

Ji, Y. R. ^{[1
]}

Zhang, X. ^{[1
]}

Wu, H. ^{[1
]}

Zhang, Q. T. ^{[1
]}

Yuan, Z. H. ^{[1
]}

Wan, C. H. ^{[1
]}

Han, X. F. ^{[1
]}

Yu, T. ^{[2
]}

Fukuda, Kenji ^{[3
]}

Naganuma, Hiroshi ^{[3
,4
]}

Tung, Mean-Jue ^{[5
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[2] Sichuan Univ, Coll Phys Sci & Technol, Chengdu 610064, Peoples R China

[3] Tohoku Univ, Dept Appl Phys, Sendai, Miyagi 9808579, Japan

[4] Univ Paris Saclay, Univ Paris Sud, CNRS, Unitae Mixte Phys,Thales, F-91767 Palaiseau, France

[5] Ind Technol Res Inst, Mat & Chem Engn Lab, Hsinchu 31040, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 13期

基金：

中国国家自然科学基金;

关键词：

ORBIT TORQUE;

D O I：

10.1063/1.4963235

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

All electrical manipulation of magnetization is crucial and of great important for spintronics devices for the sake of high speed, reliable operation, and low power consumption. Recently, widespread interests have been aroused to manipulate perpendicular magnetization of a ferromagnetic layer using spin-orbit torque (SOT) without field. We report that a commonly used antiferromagnetic material IrMn can be a promising candidate as a functional layer to realize field-free magnetization switching driven by SOT in which IrMn is employed to act as both the source of effective exchange bias field and SOT source. The critical switching current density within our study is J(c) = 2.2 x 10(7) A/cm(2), which is the samemagnitude as similar materials such as PtMn. A series of measurements based on anomalous Hall effect was systematically implemented to determine the magnetization switching mechanism. This study offers a possible route for IrMn application in similar structures. Published by AIP Publishing.

引用

页数：5

共 37 条

[1]

[Anonymous], 2015, PHYS REV B, DOI DOI 10.1103/PHYSREVB.92.144405

[2] Fieldlike and antidamping spin-orbit torques in as-grown and annealed Ta/CoFeB/MgO layers [J].

Avci, Can Onur ;

Garello, Kevin ;

Nistor, Corneliu ;

Godey, Sylvie ;

Ballesteros, Belen ;

Mugarza, Aitor ;

Barla, Alessandro ;

Valvidares, Manuel ;

Pellegrin, Eric ;

Ghosh, Abhijit ;

Miron, Ioan Mihai ;

Boulle, Olivier ;

Auffret, Stephane ;

Gaudin, Gilles ;

Gambardella, Pietro .

PHYSICAL REVIEW B, 2014, 89 (21)

[3] Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-plane current [J].

Bi, Chong ;

Huang, Lin ;

Long, Shibing ;

Liu, Qi ;

Yao, Zhihong ;

Li, Ling ;

Huo, Zongliang ;

Pan, Liqing ;

Liu, Ming .

APPLIED PHYSICS LETTERS, 2014, 105 (02)

[4] Size effects on thermoelectric behavior of ultrathin NaxCoO2 films [J].

Brinks, Peter ;

Rijnders, Guus ;

Huijben, Mark .

APPLIED PHYSICS LETTERS, 2014, 105 (19)

[5] Visual degradation in Leonardo da Vinci's iconic self-portrait: A nanoscale study (vol 104, 224101, 2014) [J].

Conte, A. Mosca ;

Pulci, O. ;

Misiti, M. C. ;

Lojewska, J. ;

Teodonio, L. ;

Violante, C. ;

Missori, M. .

APPLIED PHYSICS LETTERS, 2014, 105 (06)

[6] Scanning Kerr microscopy study of current-induced switching in Ta/CoFeB/MgO films with perpendicular magnetic anisotropy [J].

Durrant, C. J. ;

Hicken, R. J. ;

Hao, Qiang ;

Xiao, Gang .

PHYSICAL REVIEW B, 2016, 93 (01)

[7]

Emori S, 2013, NAT MATER, V12, P611, DOI [10.1038/NMAT3675, 10.1038/nmat3675]

[8] Quantifying interface and bulk contributions to spin-orbit torque in magnetic bilayers [J].

Fan, Xin ;

Celik, Halise ;

Wu, Jun ;

Ni, Chaoying ;

Lee, Kyung-Jin ;

Lorenz, Virginia O. ;

Xiao, John Q. .

NATURE COMMUNICATIONS, 2014, 5

[9] Switching of a single ferromagnetic layer driven by spin Hall effect [J].

Finocchio, G. ;

Carpentieri, M. ;

Martinez, E. ;

Azzerboni, B. .

APPLIED PHYSICS LETTERS, 2013, 102 (21)

[10]

Fukami S, 2016, NAT NANOTECHNOL, V11, P621, DOI [10.1038/nnano.2016.29, 10.1038/NNANO.2016.29]

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