Radiation response of nanometric HfSiON/SiO2 gate stacks

被引：1
|
作者：
Devine, R. A. B. [1 ]
Quevedo-Lopez, M. A. [2 ]
Alshareef, H. [2 ]
机构：
[1] EMRTC New Mexico Inst Minning & Technol, Socorro, NM 87801 USA
[2] Univ Texas Dallas, Kirtland AFB, NM 87117 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 06期
关键词：
D O I：
10.1063/1.2838186
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The x- ray irradiation sensitivity of hafnium silicon oxynitride/ silicon oxide dielectric stacks deposited on Si has been measured. Clear evidence for trapped negative charge buildup is found for samples biased positively during irradiation and also for negative bias with or without radiation. A two phase buildup of trapped negative charge is observed in the case of irradiation in the presence of positive bias suggestive of different rates of electron trapping in the two layers. (C) 2008 American Institute of Physics.
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页数：5
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