Improved Au/Zn/Au Ohmic contacts for p-type InP?

被引：0

作者：

Mang Kefeng ^{[1
]}

Tang Hengjing ^{[1
]}

Wu Xiaoli ^{[1
]}

Xu Jintong ^{[1
]}

Li Xue ^{[1
]}

Gong Haimei ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Transducer Technol, Shanghai 200083, Peoples R China

来源：

INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2007: PHOTOELECTRONIC IMAGING AND DETECTION | 2008年 / 6621卷

关键词：

ohmic contact; p-type InP; InP/InGaAs/InP (p-i-n) photodiodes; transmission line method (TLM);

D O I：

10.1117/12.790778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, an innovated Si3N4 as an out-diffusion barrier layer to Au/Zn/Au contact system for p-type InP has been proposed. Before the contacts were annealed, Si3N4 layer was deposited on the Au(200 angstrom)/Zn(700 angstrom)/Au(200 angstrom), then the Si3N4 was removed by HF and a 200 angstrom layer of pure gold was deposited to facilitate wire bonding, The specific contact resistance dropped to a minimum value of 6 x 10(-7).cm(2) (for an acceptor concentration of about 3 x 10(-3)cm(-3)) and the contact became perfectly Ohmic. Besides, Si3N4 layer is an excellent passivation layer and antireflection coating in InP/InGaAs/InP (p-i-n) photodiodes.

引用

页数：7

共 15 条

[1] OHMIC CONTACTS FOR GAAS DEVICES [J].