Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates

被引：14

作者：

Pozina, G. ^{[1
]}

Hemmingsson, C. ^{[1
]}

Paskov, P. P. ^{[1
]}

Bergman, J. P. ^{[1
]}

Monemar, B. ^{[1
]}

Kawashima, T. ^{[2
]}

Amano, H. ^{[2
]}

Akasaki, I. ^{[2
]}

Usui, A. ^{[3
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, IFM, S-58183 Linkoping, Sweden

[2] Meijo Univ, Dept Mat Sci & Engn, Nagoya, Aichi 4688502, Japan

[3] Furukawa Co Ltd, R&D Div, Tsukuba 3050856, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

关键词：

D O I：

10.1063/1.2909541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the halide vapor phase technique demonstrate metastability of the near-band-gap photoluminescence (PL). The acceptor bound exciton (ABE) line possibly related to the C acceptor vanishes in as-grown samples within a few minutes under UV laser illumination. Annealing activates the more stable Mg acceptors and passivates C acceptors. Consequently, only the ABE line related to Mg is dominant in PL spectra for the annealed samples. The temporal changes in PL are permanent at low temperatures; however, they can be recovered after heating to 100 K or higher. (C) 2008 American Institute of Physics.

引用

页数：3

共 8 条

[1] Shallow acceptors in GaN
Eberlein, T. A. G.
Jones, R.
Oberg, S.
Briddon, P. R.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (13)
[2] Optical signatures of dopants in GaN
Monemar, B.
Paskov, P. P.
Bergman, J. P.
Toropov, A. A.
Shubina, T. V.
Figge, S.
Paskova, T.
Hommel, D.
Usui, A.
Iwaya, M.
Kamiyama, S.
Amano, H.
Akasaki, I.
[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (1-3) : 168 - 174
[3] The dominant shallow 0.225 eV acceptor in GaN
Monemar, B.
Paskov, P. P.
Bergman, J. P.
Paskova, T.
Figge, S.
Dennemarck, J.
Hommel, D.
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (07): : 1604 - 1608
[4] Dominant shallow acceptor enhanced by oxygen doping in GaN
Monemara, B
Paskov, PP
Tuomisto, F
Saarinen, K
Iwaya, M
Kamiyama, S
Amano, H
Akasaki, I
Kimura, S
[J]. PHYSICA B-CONDENSED MATTER, 2006, 376 : 440 - 443
[5] Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates
Pozina, G.
Monemar, B.
Paskov, P. P.
Hemmingsson, C.
Hultman, L.
Amano, H.
Akasaki, I.
Paskova, T.
Figge, S.
Hommel, D.
Usui, A.
[J]. PHYSICA B-CONDENSED MATTER, 2007, 401 : 302 - 306
[6] Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
Pozina, G.
Paskov, P. P.
Bergman, J. P.
Hemmingsson, C.
Hultman, L.
Monemar, B.
Amano, H.
Akasaki, I.
Usui, A.
[J]. APPLIED PHYSICS LETTERS, 2007, 91 (22)
[7] Influence of microstructure on the carrier concentration of Mg-doped GaN films
Romano, LT
Kneissl, M
Northrup, JE
Van de Walle, CG
Treat, DW
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (17) : 2734 - 2736
[8] Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN
Vennéguès, P
Benaissa, M
Beaumont, B
Feltin, E
De Mierry, P
Dalmasso, S
Leroux, M
Gibart, P
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (06) : 880 - 882

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