The effect of controlled ion bombardment on the electronic structure of the Si(001) surface

被引：1
|
作者：
Roos, K. R. [1 ]
Lozano, J. [1 ]
Craig, J. H., Jr. [1 ]
机构：
[1] Bradley Univ, Dept Phys, Peoria, IL 61625 USA
来源：
APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 07期
基金：
美国国家科学基金会;
关键词：
silicon; ion bombardment; X-ray photoelectron spectroscopy; ultraviolet photoelectron spectroscopy; surface defects; surface electronic phenomena;
D O I：
10.1016/j.apsusc.2007.08.023
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have studied the effects of controlled ion bombardment on the electronic structure of the Si(0 0 1) surface. The surface was exposed to various doses of Ar+ ions accelerated towards the surface at 500 eV. X-ray photoelectron spectroscopy (XPS) spectra of the irradiated H-terminated Si(0 0 1) surface reveal the appearance of peaks that are associated with the presence of cleaved Si bonds. Ultraviolet photoelectron spectroscopy (UPS) spectra of the irradiated Si(0 0 1)2 x 1 surface show that the dimer dangling-bond surface state decays monotonically with increasing dose. These results, coupled with previous scanning tunneling microscopy (STM) studies, indicate that the breaking of dimers, and possibly the creation of adatom-like defects, during ion irradiation are responsible for the changes in the electronic structure of the valence band for this surface. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1977 / 1980
页数：4
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