Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation

被引：23

作者：

Johnson, B. C. ^{[1
]}

Haberl, B. ^{[2
]}

Bradby, J. E. ^{[2
]}

McCallum, J. C. ^{[1
]}

Williams, J. S. ^{[2
]}

机构：

[1] Univ Melbourne, Sch Phys, Melbourne, Vic 3010, Australia

[2] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

PHYSICAL REVIEW B | 2011年 / 83卷 / 23期

基金：

澳大利亚研究理事会;

关键词：

METASTABLE PHASES; AMORPHOUS-SILICON; AMBIENT PRESSURE; OPTICAL PHONONS; SUPERCONDUCTIVITY; GE; SEMICONDUCTORS; GERMANIUM; FORMS; NANOINDENTATION;

D O I：

10.1103/PhysRevB.83.235205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A micro-Raman scattering study on the linewidth and frequency shift of Si-III and Si-XII produced by indentation is presented over the temperature range 80-300 K. Measurements are compared to the Raman lines originating from the Si-I substrate. The main Si-XII Raman line shows a strong dependence on temperature and can be adequately described by anharmonic terms from the phonon proper self-energy. In contrast, the main Si-III Raman linewidth decreases with increasing temperature. A model related to electron-phonon interactions describes the data well.

引用

页数：8

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