Temperature dependence of Raman scattering from the high-pressure phases of Si induced by indentation

被引：23
|
作者：
Johnson, B. C. [1 ]
Haberl, B. [2 ]
Bradby, J. E. [2 ]
McCallum, J. C. [1 ]
Williams, J. S. [2 ]
机构：
[1] Univ Melbourne, Sch Phys, Melbourne, Vic 3010, Australia
[2] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
来源：
PHYSICAL REVIEW B | 2011年 / 83卷 / 23期
基金：
澳大利亚研究理事会;
关键词：
METASTABLE PHASES; AMORPHOUS-SILICON; AMBIENT PRESSURE; OPTICAL PHONONS; SUPERCONDUCTIVITY; GE; SEMICONDUCTORS; GERMANIUM; FORMS; NANOINDENTATION;
D O I：
10.1103/PhysRevB.83.235205
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A micro-Raman scattering study on the linewidth and frequency shift of Si-III and Si-XII produced by indentation is presented over the temperature range 80-300 K. Measurements are compared to the Raman lines originating from the Si-I substrate. The main Si-XII Raman line shows a strong dependence on temperature and can be adequately described by anharmonic terms from the phonon proper self-energy. In contrast, the main Si-III Raman linewidth decreases with increasing temperature. A model related to electron-phonon interactions describes the data well.
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收藏
页数：8
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