Ultrafast resonant terahertz response of excitons in semiconductor quantum dots

被引：8

作者：

Mueller, T. ^{[1
,2
]}

Parz, W. ^{[1
,2
]}

Unterrainer, K. ^{[1
,2
]}

Sauvage, S. ^{[3
]}

Houel, J. ^{[3
]}

Boucaud, P. ^{[3
]}

Miard, A. ^{[4
]}

Lemaitre, A. ^{[4
]}

机构：

[1] Vienna Univ Technol, Inst Photon, A-1040 Vienna, Austria

[2] Vienna Univ Technol, Zentrum Micro & Nanostruct, A-1040 Vienna, Austria

[3] Univ Paris 11, CNRS, Inst Elect Fondamentale, F-91405 Orsay, France

[4] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.77.035314

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Exciton formation and carrier-carrier interactions in semiconductor quantum dots have been investigated by means of terahertz time-domain spectroscopy. The formation of excitons leads to a blueshift of the terahertz absorption as compared to the bare electronic intersublevel absorption. We show that this is a consequence of Coulomb interactions among carriers in the quantum dots. Time-resolved studies reveal the time scale on which photogenerated electron-hole pairs in the GaAs barriers transform into confined excitons in the dots.

引用

页数：5

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