A Study on Uniformity Characteristics of a Magnetized Inductively Coupled Plasma

被引：1

作者：

Cheong, Hee-Woon ^{[1
]}

Lee, Woohyun ^{[2
]}

Kim, Ji-Won ^{[2
]}

Cha, Sujin ^{[3
]}

Kim, Kyoungji ^{[4
]}

Lee, Hwally ^{[5
]}

机构：

[1] Hoseo Univ, Grad Sch Management Technol, Asan, South Korea

[2] Samsung Elect Co Ltd, Hwaseong, South Korea

[3] Hoseo Univ, Dept Appl Stat, Asan, South Korea

[4] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul, South Korea

[5] Hyundai Motor Co, Hwaseong, South Korea

来源：

PLASMA PHYSICS REPORTS | 2020年 / 46卷 / 03期

关键词：

M-ICP; plasma; magnetic flux density; ion flux; uniformity; ION ETCHING LAG; SIO2; FREQUENCY; ANALYZER; FIELD;

D O I：

10.1134/S1063780X20030034

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

Non-uniformities in the plasma parameters in a magnetized inductively coupled plasma (M-ICP) etcher were investigated. Further in text of this article the silicon dioxide and the photoresist are called as abbreviations the oxide and the PR accordingly. The etch results of an oxide and PR were correlated with the non-uniformity characteristics of the plasma parameters. The plasma density non-uniformities and the oxide etch-rate non-uniformities in M-ICP-V (9.28 and 2.4%, respectively) were lower than those in M-ICP-A (14.6% and 21.4%, respectively) or ICP (13.03 and 5.2%, respectively). The profile angle of the etched silicon dioxide in ICP, M-ICP-A, and M-ICP-V configurations were also measured and the angle in M-ICP-V was approximately 85 degrees and similar in ICP.

引用

页码：328 / 335

页数：8

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