Depletion-mode vertical Ga2O3 trench MOSFETs fabricated using Ga2O3 homoepitaxial films grown by halide vapor phase epitaxy

被引：68

作者：

Sasaki, Kohei ^{[1
,2
]}

Thieu, Quang Tu ^{[1
]}

Wakimoto, Daiki ^{[1
,2
]}

Koishikawa, Yuki ^{[1
,2
]}

Kuramata, Akito ^{[1
,2
]}

Yamakoshi, Shigenobu ^{[1
,2
]}

机构：

[1] Novel Crystal Technol Inc, Sayama, Saitama 3501328, Japan

[2] Tamura Corp, Sayama, Saitama 3501328, Japan

来源：

APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 12期

关键词：

BETA-GA2O3; SINGLE-CRYSTALS; SCHOTTKY-BARRIER DIODES; EDGE;

D O I：

10.7567/APEX.10.124201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed depletion-mode vertical Ga2O3 trench metal-oxide-semiconductor field-effect transistors by using n(+) contact and n(-) drift layers. These epilayers were grown on an n(+) (001) Ga2O3 single-crystal substrate by halide vapor phase epitaxy. Cu and HfO2 were used for the gate metal and dielectric film, respectively. The mesa width and gate length were approximately 2 and 1 mu m, respectively. The devices showed good DC characteristics, with a specific on-resistance of 3.7m Omega cm(2) and clear current modulation. An on-off ratio of approximately 10(3) was obtained. (C) 2017 The Japan Society of Applied Physics

引用

页数：3

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