Site selective excitation of Er-implanted GaN

被引：5
|
作者：
Przybylinska, H
Jantsch, W
Kozanecki, A
机构：
[1] Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 81卷 / 1-3期
关键词：
erbium; GaN; photoluminescence; 1.5 mu m emission;
D O I：
10.1016/S0921-5107(00)00703-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photoluminescence (PL), and PL excitation studies of Er-implanted GaN reveal a variety of Er centers with different excitation mechanisms. The PL of the centers dominating under above band-gap illumination is mediated primarily by donor-acceptor pair recombination, and subject to temperature quenching. Evidence is found for significant energy migration among Er centers dominating under direct excitation into the 4f-shell, which leads to a stronger quenching. The PL intensity of centers excited by a broad, below-gap absorption band, associated with deep traps is temperature independent. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：147 / 149
页数：3
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