Site selective excitation of Er-implanted GaN

被引：5
|
作者：
Przybylinska, H
Jantsch, W
Kozanecki, A
机构：
[1] Johannes Kepler Univ, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 81卷 / 1-3期
关键词：
erbium; GaN; photoluminescence; 1.5 mu m emission;
D O I：
10.1016/S0921-5107(00)00703-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photoluminescence (PL), and PL excitation studies of Er-implanted GaN reveal a variety of Er centers with different excitation mechanisms. The PL of the centers dominating under above band-gap illumination is mediated primarily by donor-acceptor pair recombination, and subject to temperature quenching. Evidence is found for significant energy migration among Er centers dominating under direct excitation into the 4f-shell, which leads to a stronger quenching. The PL intensity of centers excited by a broad, below-gap absorption band, associated with deep traps is temperature independent. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：147 / 149
页数：3
相关论文
共 50 条
  • [21] Luminescence properties of Er implanted n-GaN
    Uekusa, S
    Hirano, T
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 498 - 501
  • [22] Effects of concentration and thermal annealing on the optical activation of Er implanted into GaN layers
    Sathish, N.
    Pathak, A. P.
    Devaraju, G.
    Trave, E.
    Mazzoldi, P.
    Dhamodaran, S.
    Kulkarni, V. N.
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2012, 167 (07): : 512 - 519
  • [23] Effect of crystal orientation on defect production and optical activation of Er-implanted sapphire
    Alves, E
    da Silva, MF
    Soares, JC
    Monteiro, T
    Soares, J
    Santos, L
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 166 : 183 - 187
  • [24] Photoluminescence in Er-implanted amorphous Ge-S-Ga thin films
    Ivanova, ZG
    Koughia, K
    Tonchev, D
    Pivin, JC
    Kasap, SO
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2005, 7 (03): : 1271 - 1276
  • [25] Excitation mechanisms of Er optical centers in GaN epilayers
    George, D. K.
    Hawkins, M. D.
    McLaren, M.
    Jiang, H. X.
    Lin, J. Y.
    Zavada, J. M.
    Vinh, N. Q.
    APPLIED PHYSICS LETTERS, 2015, 107 (17)
  • [26] Multi-Wavelength Emission from Er-Implanted YbVO4Crystal
    Wang, Y.
    Song, X. -X.
    Tang, W. -J.
    Jia, C. -L.
    PHYSICS OF THE SOLID STATE, 2020, 62 (06) : 1067 - 1073
  • [27] Optical characterization of Er-implanted ZnO films formed by sol-gel method
    Fukudome, T
    Kaminaka, A
    Isshiki, H
    Saito, R
    Yugo, S
    Kimura, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 : 287 - 290
  • [28] High temperature annealing of Er implanted GaN
    Alves, E
    Monteiro, T
    Soares, J
    Santos, L
    da Silva, MF
    Soares, JC
    Lojkowski, W
    Kolesnikov, D
    Vianden, R
    Correia, JG
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 81 (1-3): : 132 - 135
  • [29] Multi-Wavelength Emission from Er-Implanted YbVO4 Crystal
    Y. Wang
    X.-X. Song
    W.-J. Tang
    C.-L. Jia
    Physics of the Solid State, 2020, 62 : 1067 - 1073
  • [30] Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy
    Fleischman, Z.
    Munasinghe, C.
    Steckl, A. J.
    Wakahara, A.
    Zavada, J.
    Dierolf, V.
    APPLIED PHYSICS B-LASERS AND OPTICS, 2009, 97 (03): : 607 - 618
12345