In situ TEM annealing of ion-amorphized Hi Nicalon S and Tyranno SA3 SiC fibers

被引：5
作者：
Huguet-Garcia, J. [1 ]
Jankowiak, A. [1 ]
Miro, S. [2 ]
Meslin, E. [3 ]
Serruys, Y. [2 ]
Costantini, J. -M. [1 ]
机构：
[1] CEA, DEN, Serv Rech Met Appl, F-91191 Gif Sur Yvette, France
[2] CEA, DEN, Serv Rech Met Phys, F-91191 Gif Sur Yvette, France
[3] CEA, DEN, Serv Rech Met Phys, Lab JANNUS, F-91191 Gif Sur Yvette, France
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2016年 / 374卷
关键词：
SiC fibers; Ion-amorphization; Recrystallization; In situ TEM; Thermal annealing; AMORPHOUS-SILICON CARBIDE; SOLID-PHASE EPITAXY; RECRYSTALLIZATION; IRRADIATION; BEHAVIOR;
D O I：
10.1016/j.nimb.2015.12.032
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In this work, recrystallization of ion-amorphized Hi Nicalon Type S and Tyranno SA3 SiC fibers (4 MeV Au3+, 2 x 10(15) cm(-2)) has been studied via in situ TEM annealing. Both fibers show a two-step recovery process of the radiation damage. First recovery stage starts at temperatures as low as 250 degrees C and implies recovery of the radiation swelling. Eventually the amorphous layer recrystallizes with no signs of polytype change (3C-SiC). Recrystallization temperatures yield 900-920 degrees C and 930 degrees C for the HNS and the TSA3 respectively. HNS fiber shows columnar recrystallization perpendicular to the amorphous-crystalline inter phase with a grain growth rate of similar to 20 nm min(-1). On the other hand, recrystallization of TSA3 fiber is rather "spontaneous" with no preferential growth direction. The different recrystallization is attributed to the different microstructure of the fibers. (C) 2015 Elsevier B.V. All rights reserved.
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页码：76 / 81
页数：6
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