Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors

被引：73

作者：

Kaun, Stephen W. ^{[1
]}

Wong, Man Hoi ^{[2
]}

Dasgupta, Sansaptak ^{[2
]}

Choi, Soojeong ^{[1
]}

Chung, Roy ^{[1
]}

Mishra, Umesh K. ^{[2
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 02期

基金：

美国国家科学基金会;

关键词：

MOLECULAR-BEAM EPITAXY; SURFACE-MORPHOLOGY; GALLIUM NITRIDE; GAN; GROWTH; CARBON; 6H-SIC(0001); HEMTS; LAYER;

D O I：

10.1143/APEX.4.024101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN/GaN heterostructures were regrown on three semi-insulating GaN templates with threading dislocation densities of similar to 2 x 10(10), similar to 5 x 10(8), and similar to 5 x 10(7) cm(-2). Regrowths were carried out under Ga-rich conditions by plasma-assisted molecular beam epitaxy to determine the effects of threading dislocation density on leakage through Schottky contacts on the AlGaN/GaN heterostructures. A similar AlGaN/GaN heterostructure was directly grown on 4H-SiC under Ga-rich conditions for comparison with the regrown heterostructures. High electron mobility transistors were fabricated. Decreasing the threading dislocation density from similar to 2 x 10(10) to similar to 5 x 10(7) cm(-2) yielded up to a 45-fold decrease in the average reverse Schottky diode current at -10 V bias. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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