Kinetics of ultrathin thermal oxide growth on Si(001)

被引：6

作者：

Shimizu, H ^{[1
]}

Sato, T ^{[1
]}

机构：

[1] Nihon Univ, Coll Engn, Dept Elect & Elect Engn, Tamura, Fukushima 9638642, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 02期

关键词：

D O I：

10.1143/JJAP.44.808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The oxidation kinetics and the effect of aluminum (Al) on the surface oxidation of silicon (Si) (001) in the temperature range from 600 to 900 degrees C in a dry oxygen ambient have been investigated using spectroscopic ellipsometry and X-ray photoelectron spectroscopy. A nonlinear dependence of the thermal oxidation rate on temperature was observed at 760 degrees C. At temperatures lower than 760 degrees C, the activation energy was determined to be 0.27-0.57 eV for the first and/or second atomic layer of Si. The activation energy above 760 degrees C was found to be 1.47-1.60 eV, approaching the value of bulk oxidation (similar to 2 eV), implying that the SiO(2)-Si interface moves deeper. It was found that the inclusion of Al reduces the oxide growth by 20 to 30% of that obtained on "clean" oxide. A schematic illustration that takes into account the mechanism by which a thin Al rich layer inhibits oxygen diffusion is presented.

引用

页码：808 / 812

页数：5

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