Dose effects in electron beam irradiation of DNA-complex thin films

被引：12

作者：

Li, W. ^{[1
]}

Jones, R. ^{[1
]}

Spaeth, H. ^{[1
]}

Steckl, A. J. ^{[1
]}

机构：

[1] Univ Cincinnati, Nanoelect Lab, Cincinnati, OH 45221 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 06期

关键词：

biochemistry; biological effects of ionising particles; circular dichroism; dissociation; DNA; electron beam effects; molecular biophysics; solubility; surfactants; thin films; ultraviolet spectra; water; DEOXYRIBONUCLEIC-ACID DNA; DOUBLE-STRAND BREAKS; LIPID COMPLEX; CONDUCTIVITY; RADIATION;

D O I：

10.1063/1.3478227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron beam irradiation of double-stranded DNA (dsDNA)-surfactant thin films was investigated. Irradiation caused dissociation, leading to increasing thin film solubility in water and degradation of dsDNA. These two effects produced a maximum concentration of dsDNA in aqueous solution at 400 mu C/cm(2) dose. These properties resulted in dual-mode resist characteristics of the DNA-surfactant films. At low dose, the DNA films functioned as positive resist while at high dose they worked as negative resist. The transition between the two regimes also occurred at 400 mu C/cm(2). This implies that the cross-linking process (typical for negative resists) first requires the dissociation of the DNA-surfactant complex. (C) 2010 American Institute of Physics. [doi:10.1063/1.3478227]

引用

页数：3

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