Characteristics of 600, 1200, and 3300 V Planar SiC-MOSFETs for Energy Conversion Applications

被引：68

作者：

Imaizumi, Masayuki ^{[1
]}

Miura, Naruhisa ^{[2
,3
]}

机构：

[1] Mitsubishi Electr Corp, Power Device Works, Fukuoka 8190192, Japan

[2] Mitsubishi Electr Corp, Adv Technol Res & Dev Ctr, Amagasaki, Hyogo 6618661, Japan

[3] Future Power Elect Technol, Minato 1050012, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 02期

关键词：

Body diode; planar MOSFET; power module; reverse bias safe operating area (RBSOA); silicon carbide (SiC); switching loss; threshold voltage; THRESHOLD VOLTAGE; KV;

D O I：

10.1109/TED.2014.2358581

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiC-MOSFETs provide superior performance for next generation power electronics systems. High threshold voltage 600 V SiC-MOSFETs were realized utilizing a reoxidation process, which drastically improves a tradeoff between an ON-resistance and a threshold voltage. Low-loss SiC-MOSFETs with a 1200 V/100-A rating have been developed. Using the developed SiC-MOSFETs, 1200 V/800-A high-power full SiC module with an ON-resistance as low as 2.9 m Omega at 150 degrees C was successfully fabricated. The high-power module markedly reduces power loss especially at high carrier frequency. Large-area 3300 V SiC-MOSFETs with an ON-resistance of 52 m Omega at 175 degrees C exhibit an adequate reverse bias safe operating area and 3300 V SiC-MOSFETs screened by applying a body diode current stress show stable characteristics under a continuous current through their body diode for 1000 h.

引用

页码：390 / 395

页数：6

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Imaizumi, M. ;

Tarui, Y. ;

Kinouchi, S. ;

Nakatake, H. ;

Nakao, Y. ;

Watanabe, T. ;

Fujihira, K. ;

Miura, N. ;

Takami, T. ;

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