Low power consumption light emitting device containing TiO2:Er3+ thin film prepared by sol-gel method

被引：17

作者：

Zhang, Yangyi ^{[1
,2
]}

Chen, Jiaming ^{[1
]}

Hou, Guozhi ^{[1
]}

Li, Dongke ^{[1
]}

Wu, Yangqing ^{[3
]}

Xu, Jun ^{[1
]}

Xu, Ling ^{[1
]}

Chen, Kunji ^{[1
]}

机构：

[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Chuzhou Univ, Sch Mech & Elect Engn, Chuzhou 239000, Anhui, Peoples R China

[3] Qufu Normal Univ, Sch Phys & Phys Engn, Qufu 273165, Shandong, Peoples R China

来源：

OPTICS EXPRESS | 2020年 / 28卷 / 05期

基金：

中国国家自然科学基金;

关键词：

ELECTROLUMINESCENCE; NANOCRYSTALS; MECHANISM;

D O I：

10.1364/OE.384810

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Er3+ ions doped titanium dioxide (TiO2) thin films have been prepared by sol-gel method. The photoluminescence both in visible light range (510-580 nm and 640-690 nm) and near infrared light range (1400-1700nm) have been observed. The photoluminescence excitation spectra demonstrate that energy transfer from wide band-gap TiO2 to Er3+ ions causes the infrared light emission. It is also found that the post annealing temperature can influence the luminescence intensity significantly. Based on sol-gel prepared TiO2:Er3+ thin films, we fabricate light emitting device containing ITO/TiO2:Er3+/SiO2/n+-Si/Al structure. Both the visible and near infrared electroluminescence (EL) can be detected under the operation voltage as low as 5.6 V and the working current of 0.66 mA, which shows the lower power consumption compared with the conventional EL devices. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：6064 / 6070

页数：7

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