Terahertz-frequency electronic coupling in vertically coupled quantum dots

被引：12
|
作者：
Boucaud, P
Williams, JB
Gill, KS
Sherwin, MS
Schoenfeld, WV
Petroff, PM
机构：
[1] Univ Calif Santa Barbara, Quantum Inst, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 26期
关键词：
D O I：
10.1063/1.1334912
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied terahertz absorption of samples containing two layers of self-aligned, self-assembled InAs quantum dots separated by a thin GaAs barrier. The vertically coupled dots were charged with electrons by applying a voltage bias between a metal gate and a doped layer beneath the dots. For a positive gate bias corresponding to flatband conditions, an absorption peak was observed near 10 meV (2.4 THz). The absorption is attributed to the inhomogeneously broadened transition between the quantum mechanically split levels (bonding and antibonding states) in the vertically coupled quantum dots. (C) 2000 American Institute of Physics. [S0003-6951(00)04252-2].
引用
收藏
页码：4356 / 4358
页数：3
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