Passive Damping of Device Current and Motor Terminal Voltage in a SiC MOSFET Based Inverter Fed Induction Motor Drive

被引：0
作者：
Nayak, Parthasarathy [1 ]
Sukhatme, Yash [1 ]
Hatua, Kamalesh [1 ]
机构：
[1] Indian Inst Technol Madras, Dept Elect Engn, Madras 600036, Tamil Nadu, India
来源：
2016 IEEE INTERNATIONAL CONFERENCE ON POWER ELECTRONICS, DRIVES AND ENERGY SYSTEMS (PEDES) | 2016年
关键词：
Induction motor; R-L filter; overvoltage; SiC MOSFET; FILTER; DV/DT;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The commercial availability of silicon carbide (SiC) MOSFET has been a significant boost for power electronics industry. It is due to its unique improved switching capabilities compared to state of the art silicon (Si) IGBT. However, the faster switching response of SiC MOSFET gives rise to different technical issues in practical applications. This paper analyzes two of these issues. The first problem is the detrimental effects of the parasitic capacitance of the load on the device current. The second problem is the excessive overvoltage experienced at the load terminal. An in-depth analysis has been carried out on these detrimental effects. It is proposed to implement a passive R-L filter between the inverter and the load to minimize these issues. The effectiveness of the R-L filter has been verified by simulation studies as well as in a 10 kVA SiC MOSFET based inverter fed induction motor drive application.
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页数：6
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