Amorphous InGaZnO Ultraviolet Phototransistors With a Thin Ga2O3 Layer

被引：13

作者：

Chang, Shoou-Jinn ^{[1
,2
]}

Chang, T. H. ^{[1
,2
]}

Weng, W. Y. ^{[1
,2
]}

Chiu, C. J. ^{[1
,2
]}

Chang, S. P. ^{[1
,2
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Dept Elect Engn, Tainan 70101, Taiwan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2014年 / 20卷 / 06期

关键词：

IGZO; phototransistors; Ga2O3; FILM-TRANSISTOR;

D O I：

10.1109/JSTQE.2014.2330604

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the fabrication of amorphous IGZO (a-IGZO) phototransistors with a thin Ga2O3 layer. It was found that the performances of the phototransistors depend strongly on the oxygen partial pressure during the deposition of the Ga2O3 layer. It was also found that the fabricated devices exhibited good electrical properties with electron mobility (mu(FE)) of 13.2 cm(2)/V.s, subthreshold swing (SS) of 0.13 V/decade, and ON/OFF current ratio> 5 x 10(5). Furthermore, it was found that two cutoffs exist in the devices prepared with 25% oxygen partial pressure. The deep-ultraviolet (UV)-to-visible rejection ratio and near-UV-to-visible rejection ratio of the fabricated phototransistors were 10(4) and 20, respectively.

引用

页码：125 / 129

页数：5

共 22 条

[1] Amorphous InGaZnO ultraviolet phototransistors with double-stack Ga2O3/SiO2 dielectric [J].