Origin of Waveguiding in Ultrashort Pulse Structured Silicon

被引:13
作者
Kaemmer, Helena [1 ]
Matthaeus, Gabor [1 ]
Lammers, Kim A. [1 ]
Vetter, Christian [1 ]
Chambonneau, Maxime [1 ]
Nolte, Stefan [1 ,2 ]
机构
[1] Friedrich Schiller Univ Jena, Abbe Ctr Photon, Inst Appl Phys, Albert Einstein Str 15, D-07745 Jena, Germany
[2] Fraunhofer Inst Appl Opt & Precis Engn, Albert Einstein Str 7, D-07745 Jena, Germany
关键词
laser inscription; raman microscopy; silicon waveguide; ultrashort pulses; OPTICAL-PROPERTIES; CRYSTALLINE SILICON; LASER; GUIDES; INSCRIPTION; SI;
D O I
10.1002/lpor.201800268
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The origin of waveguiding in the bulk of silicon after sub-ps laser inscription is investigated. Locally resolved Raman measurements of waveguide cross sections and along the propagation axis reveal highly localized crystal deformations. These modifications consist of highly confined regions of silicon with a disturbed crystal structure accompanied with strain. This transformation is responsible for a local increase of the refractive index allowing localized waveguiding. On the basis of near-field measurements at an excitation wavelength of 1550 nm, the absolute value of the refractive index change is estimated to be in the range of 10(-3).
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页数:5
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