High sensitivity to temperature and quantum effects in vanadium oxide diodes

被引：5

作者：

Kuznetsov, VA

Haneman, D

机构：

[1] School of Physics, University of New South Wales, Sydney

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 10期

关键词：

D O I：

10.1063/1.362368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated vanadium oxide films by the method of oxidation of evaporated vanadium films, and found it possible to achieve a temperature coefficient of the resistance for a diode structure of 25% and more per degree Celsius-much higher than any previous result. The nature of the contact influences the sensitivity. The structures showed switching behavior, and also in some cases apparent quantum effects. The films are composed of mixed oxides. (C) 1996 American Institute of Physics.

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页码：8109 / 8111

页数：3

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