Improved DFT for Testing Power Switches

被引:20
作者
Khursheed, Saqib [1 ]
Yang, Sheng [1 ]
Al-Hashimi, Bashir M. [1 ]
Huang, Xiaoyu [1 ]
Flynn, David [2 ]
机构
[1] Univ Southampton, Sch Elect & Comp Sci, Southampton SO9 5NH, Hants, England
[2] ARM Ltd, Cambridge, England
来源
2011 16TH IEEE EUROPEAN TEST SYMPOSIUM (ETS) | 2011年
基金
英国工程与自然科学研究理事会;
关键词
Sleep transistor; power switch; leakage power management; test time overhead; DFT; design for test;
D O I
10.1109/ETS.2011.63
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Power switches are used as part of power-gating technique to reduce leakage power of a design. To the best of our knowledge this is the first study that analyzes recently proposed DFT solutions for testing power switches through SPICE simulations on a number of ISCAS benchmarks and presents the following contributions. It provides evidence of long discharge time when power switches are turned-off, when testing power switches using available DFT solutions. This may either lead to false test (false-fail or false-pass) or long test time. This problem is addressed through a simple and effective DFT solution to reduce the discharge time. The proposed DFT solution has been validated through SPICE simulation and shows an improvement in discharge time of at least 28-times, based on a number of ISCAS benchmarks synthesized with a 90-nm gate library.
引用
收藏
页码:7 / 12
页数:6
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