Influence Of Thermal Annealing On Initial Zn Layers And The Properties Of ZnO Thin Films Grown By PA-MBE

被引：0

作者：

Cho, M. Y. ^{[1
]}

Kim, H. G. ^{[1
]}

Jeon, S. M. ^{[1
]}

Kim, G. S. ^{[1
]}

Choi, H. Y. ^{[1
]}

Yim, K. G. ^{[1
]}

Kim, M. S. ^{[1
]}

Lee, D. Y. ^{[2
]}

Kim, J. S. ^{[3
,4
]}

Eom, G. S. ^{[5
]}

Lee, J. I. ^{[6
]}

Leem, J. Y. ^{[1
]}

机构：

[1] Inje Univ, Dept Nano Syst Engn, Ctr Nano Mfg, Gimhae, South Korea

[2] Samsung LED Co Ltd, Epimfg Technol, Suwon, South Korea

[3] Chonbuk Natl Univ, Div Adv Mat Engn, Jeonju, South Korea

[4] Yeungnam Univ, Dept Phys, Gyongsan, South Korea

[5] ALPHAPLUS Co Ltd, Pohang 790834, South Korea

[6] Korea Res Inst Stand & Sci, Adv Instrument Technol Ctr, Daejeon, South Korea

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

Zinc oxide; Molecular beam epitaxy; Scanning electron microscopy; Photoluminescence;

D O I：

10.1063/1.3666308

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO thin films were grown on p-type Si (100) by plasma-assisted molecular beam epitaxy (PA-MBE). Before the growth of the ZnO thin films, the initial Zn layers were deposited on the Si substrates. In order to investigate the effects of thermal annealing, the initial Zn layers were annealed at the temperature range from 500 to 700 degrees C for 30 min under oxygen ambient. The properties of the ZnO thin films with annealed initial Zn layers have been investigated by Xray diffraction (XRD), room temperature (RT) photoluminescence (PL), and scanning electron microscopy (SEM).

引用

页数：2

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