Formation of silicon nanoclusters in silicon oxide using an electron beam

被引：0
|
作者：
Zamoryanskaya, MV [1 ]
Sokolov, VI [1 ]
Sitnikova, AA [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, RU-194021 St Petersburg, Russia
来源：
BEAM INJECTION ASSESSMENT OF MICROSTRUCTURES IN SEMICONDUCTORS, 2000 | 2000年 / 78-79卷
关键词：
cathodoluminescence; electrons beam; modification of silicon oxide; silicon nanocluster;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electron beam of high power was used for the formation of the silicon nanoclusters in different silicon oxides (glass, thermal films, opal, a-quartz). The modified areas of the oxides were studied using local cathodoluminescence, (CL), transmission electron microscopy, and measurements of absorption current. The rate of modification depends on the following properties of oxide: density, porosity, and pores dimensions.
引用
收藏
页码：349 / 356
页数：8
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