Transport properties of the n-type SrTiO3/LaAlO3 interface
被引:14
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作者:
Reshak, A. H.
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机构:
Univ West Bohemia, New Technol Res Ctr, Univ 8, Plzen 30614, Czech Republic
Univ Malaysia Perlis, Sch Mat Engn, Kangar 01007, Perlis, MalaysiaUniv West Bohemia, New Technol Res Ctr, Univ 8, Plzen 30614, Czech Republic
Reshak, A. H.
[1
,2
]
机构:
[1] Univ West Bohemia, New Technol Res Ctr, Univ 8, Plzen 30614, Czech Republic
[2] Univ Malaysia Perlis, Sch Mat Engn, Kangar 01007, Perlis, Malaysia
THERMOELECTRIC PROPERTIES;
ELECTRON GASES;
LAALO3/SRTIO3;
MECHANISM;
D O I:
10.1039/c6ra21929b
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
The thermoelectric properties of the (001) n-type 6.5STO/1.5LAO interface were investigated by means of the all-electron full-potential method based on the semi-classical Boltzmann theory. Calculations show that the n-type 6.5STO/1.5LAO interface exhibits non-zero density of states at the Fermi level (E-F), which leads to unusual transport properties and enhances the electrical conductivity. The influence of the temperature on the carrier mobility and the carrier concentration has been investigated. The calculated carrier concentration as a function of temperature is in concordance with previous experimental and theoretical work. At above the E-F, a significant increase in the electrical conductivity occurs to reach the maximum value 1.98 x 10(20) (Omega m s)(-1) at mu - E-F = 0.05 eV for 300 K, confirming that the 6.5STO/1.5LAO interface is an n-type conduction. The Seebeck coefficient has a negative sign, which confirms that the 6.5STO/1.5LAO interface is an n-type conduction in the vicinity of EF. It has been found that the power factor is zero at low temperature, which rapidly increases to reach its maximum value 8.1 x 10(11) W m(-1) K-2 s(-1) at 900 K. Furthermore, the transport coefficients were investigated as a function of chemical potential at three constant temperatures (300, 600 and 900 K). We would like to highlight that our calculated Seebeck coefficient and carrier concentration are in concordance with previous experimental and theoretical work on 4, 5 and 6 u.c. STO/LAO interfaces. The large Seebeck coefficient is attributed to the non-zero density of states at the E-F. The increase of the Seebeck coefficient also leads to a maximum of the power factor.
机构:
Tel Aviv Univ, Raymond & Beverly Sackler Sch Phys & Astron, IL-69978 Tel Aviv, IsraelTel Aviv Univ, Raymond & Beverly Sackler Sch Phys & Astron, IL-69978 Tel Aviv, Israel
Lerer, S.
Ben Shalom, M.
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Tel Aviv Univ, Raymond & Beverly Sackler Sch Phys & Astron, IL-69978 Tel Aviv, IsraelTel Aviv Univ, Raymond & Beverly Sackler Sch Phys & Astron, IL-69978 Tel Aviv, Israel
Ben Shalom, M.
Deutscher, G.
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Tel Aviv Univ, Raymond & Beverly Sackler Sch Phys & Astron, IL-69978 Tel Aviv, IsraelTel Aviv Univ, Raymond & Beverly Sackler Sch Phys & Astron, IL-69978 Tel Aviv, Israel
Deutscher, G.
Dagan, Y.
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Tel Aviv Univ, Raymond & Beverly Sackler Sch Phys & Astron, IL-69978 Tel Aviv, IsraelTel Aviv Univ, Raymond & Beverly Sackler Sch Phys & Astron, IL-69978 Tel Aviv, Israel
机构:
Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Zhang, Fan
Fang, Yue-Wen
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E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200062, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Fang, Yue-Wen
Chan, Ngai Yui
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Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Chan, Ngai Yui
Lo, Wing Chong
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Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Lo, Wing Chong
Li, Dan Feng
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Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Li, Dan Feng
Duan, Chun-Gang
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E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200062, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Duan, Chun-Gang
Ding, Feng
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机构:
Hong Kong Polytech Univ, Inst Text & Clothing, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
Ding, Feng
Dai, Ji Yan
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Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
机构:
Seoul Natl Univ, Dept Phys & Astron, FPRD, Ctr Strongly Correlated Mat Res, Seoul 151747, South KoreaSeoul Natl Univ, Dept Phys & Astron, FPRD, Ctr Strongly Correlated Mat Res, Seoul 151747, South Korea
Li, Yun
Phattalung, Sutassana Na
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Suranaree Univ Technol, Sch Phys, Synchrotron Light Res Inst, Nakhon Ratchasima 30000, ThailandSeoul Natl Univ, Dept Phys & Astron, FPRD, Ctr Strongly Correlated Mat Res, Seoul 151747, South Korea
Phattalung, Sutassana Na
Limpijumnong, Sukit
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Suranaree Univ Technol, Sch Phys, Synchrotron Light Res Inst, Nakhon Ratchasima 30000, ThailandSeoul Natl Univ, Dept Phys & Astron, FPRD, Ctr Strongly Correlated Mat Res, Seoul 151747, South Korea
Limpijumnong, Sukit
Kim, Jiyeon
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Seoul Natl Univ, Dept Phys & Astron, FPRD, Ctr Strongly Correlated Mat Res, Seoul 151747, South KoreaSeoul Natl Univ, Dept Phys & Astron, FPRD, Ctr Strongly Correlated Mat Res, Seoul 151747, South Korea
Kim, Jiyeon
Yu, Jaejun
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Seoul Natl Univ, Dept Phys & Astron, FPRD, Ctr Strongly Correlated Mat Res, Seoul 151747, South KoreaSeoul Natl Univ, Dept Phys & Astron, FPRD, Ctr Strongly Correlated Mat Res, Seoul 151747, South Korea
机构:
Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, IndiaIndian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India
Nandy, S.
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Mohanta, N.
Acharya, S.
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Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, IndiaIndian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India
Acharya, S.
Taraphder, A.
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Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India
Indian Inst Technol, Ctr Theoret Studies, Kharagpur 721302, W Bengal, IndiaIndian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India
机构:
Sharif Univ Technol, Dept Phys, Tehran, Iran
Inst Res Fundamental Sci IPM, Sch Phys, Tehran 193955531, IranSharif Univ Technol, Dept Phys, Tehran, Iran
Faridi, A.
Asgari, Reza
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Inst Res Fundamental Sci IPM, Sch Phys, Tehran 193955531, Iran
Inst Res Fundamental Sci IPM, Sch Nano Sci, Tehran 193955531, IranSharif Univ Technol, Dept Phys, Tehran, Iran