Time-resolved studies of single semiconductor quantum dots

被引：57
作者：
Zwiller, V [1 ]
Pistol, ME [1 ]
Hessman, D [1 ]
Cederström, R [1 ]
Seifert, W [1 ]
Samuelson, L [1 ]
机构：
[1] Univ Lund, S-22100 Lund, Sweden
来源：
PHYSICAL REVIEW B | 1999年 / 59卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.59.5021
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present time-resolved optical studies of single self-assembled quantum dots. The dots were obtained by Stranski-Krasranow growth of InP on Ga0.5In0.5P. A selective technique based on etching after electron-beam lithography, combined with the use of an optical microscope to enhance the spatial resolution of a time-resolved photoluminescence system, enabled the observation of single quantum dots. The emission linewidth of a single InP dot is observed to be around 3 meV. The evolution of the time-resolved photoluminescence spectra was studied as a function of excitation intensity. Under intense pulsed excitation the decay is no more a simple exponential due to feeding from higher energy levels, as a result of state filling. A four-level rate equation system is successfully used to model the results. [S0163-1829(99)06204-9].
引用
收藏
页码：5021 / 5025
页数：5
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共 23 条
  • [11] Optical studies of individual InAs quantum dots in GaAs: Few-particle effects
    Landin, L
    Miller, MS
    Pistol, ME
    Pryor, CE
    Samuelson, L
    [J]. SCIENCE, 1998, 280 (5361) : 262 - 264
  • [12] PHOTOLUMINESCENCE OF SINGLE INAS QUANTUM DOTS OBTAINED BY SELF-ORGANIZED GROWTH ON GAAS
    MARZIN, JY
    GERARD, JM
    IZRAEL, A
    BARRIER, D
    BASTARD, G
    [J]. PHYSICAL REVIEW LETTERS, 1994, 73 (05) : 716 - 719
  • [13] FABRICATION OF QUANTUM-DOT STRUCTURES USING AEROSOL DEPOSITION AND PLASMA-ETCHING TECHNIQUES
    MAXIMOV, I
    GUSTAFSSON, A
    HANSSON, HC
    SAMUELSON, L
    SEIFERT, W
    WIEDENSOHLER, A
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 748 - 753
  • [14] Landau level formation in semiconductor quantum dots in a high magnetic field
    Nomura, S
    Samuelson, L
    Pistol, ME
    Uchida, K
    Miura, N
    Sugano, T
    Aoyagi, Y
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (16) : 2316 - 2318
  • [15] Rapid carrier relaxation in self-assembled InxGa1-xAs/GaAs quantum dots
    Ohnesorge, B
    Albrecht, M
    Oshinowo, J
    Forchel, A
    Arakawa, Y
    [J]. PHYSICAL REVIEW B, 1996, 54 (16): : 11532 - 11538
  • [16] Time-resolved luminescence of InP quantum dots in a Ga0.5In0.5P matrix:: Carrier injection from the matrix
    Okuno, T
    Ren, HW
    Sugisaki, M
    Nishi, K
    Sugou, S
    Masumoto, Y
    [J]. PHYSICAL REVIEW B, 1998, 57 (03): : 1386 - 1389
  • [17] Band-filling in InP dots: Single dot spectroscopy and carrier dynamics
    Pistol, ME
    Castrillo, P
    Hessman, D
    Anand, S
    Carlsson, N
    Seifert, W
    Samuelson, L
    [J]. SOLID-STATE ELECTRONICS, 1996, 40 (1-8) : 357 - 361
  • [18] Electronic structure of strained InP/Ga0.51In0.49P quantum dots
    Pryor, C
    Pistol, ME
    Samuelson, L
    [J]. PHYSICAL REVIEW B, 1997, 56 (16): : 10404 - 10411
  • [19] State-filling and magneto-photoluminescence of excited states in InGaAs/GaAs self-assembled quantum dots
    Raymond, S
    Fafard, S
    Poole, PJ
    Wojs, A
    Hawrylak, P
    Gould, C
    Sachrajda, A
    Charbonneau, S
    Leonard, D
    Leon, R
    Petroff, PM
    Merz, JL
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1997, 21 (04) : 541 - 558
  • [20] In-situ growth of quantum dot structures by the Stranski-Krastanow growth mode
    Seifert, W
    Carlsson, N
    Miller, M
    Pistol, ME
    Samuelson, L
    Wallenberg, LR
    [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1996, 33 (04) : 423 - 471
123