Time-resolved studies of single semiconductor quantum dots

被引：57
作者：
Zwiller, V [1 ]
Pistol, ME [1 ]
Hessman, D [1 ]
Cederström, R [1 ]
Seifert, W [1 ]
Samuelson, L [1 ]
机构：
[1] Univ Lund, S-22100 Lund, Sweden
来源：
PHYSICAL REVIEW B | 1999年 / 59卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.59.5021
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present time-resolved optical studies of single self-assembled quantum dots. The dots were obtained by Stranski-Krasranow growth of InP on Ga0.5In0.5P. A selective technique based on etching after electron-beam lithography, combined with the use of an optical microscope to enhance the spatial resolution of a time-resolved photoluminescence system, enabled the observation of single quantum dots. The emission linewidth of a single InP dot is observed to be around 3 meV. The evolution of the time-resolved photoluminescence spectra was studied as a function of excitation intensity. Under intense pulsed excitation the decay is no more a simple exponential due to feeding from higher energy levels, as a result of state filling. A four-level rate equation system is successfully used to model the results. [S0163-1829(99)06204-9].
引用
收藏
页码：5021 / 5025
页数：5
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