Plasmonic terahertz detection by a double-grating-gate field-effect transistor structure with an asymmetric unit cell

被引：150

作者：

Popov, V. V. ^{[1
,2
]}

Fateev, D. V. ^{[1
,2
]}

Otsuji, T. ^{[3
]}

Meziani, Y. M. ^{[4
]}

Coquillat, D. ^{[5
,6
]}

Knap, W. ^{[5
,6
]}

机构：

[1] Kotelnikov Inst Radio Engn & Elect, Saratov Branch, Saratov 410019, Russia

[2] Saratov NG Chernyshevskii State Univ, Saratov 410012, Russia

[3] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[4] Univ Salamanca, Dpto Fis Aplicada, E-37008 Salamanca, Spain

[5] CNRS, Lab Charles Coulomb UMR5221, F-34095 Montpellier, France

[6] Univ Montpellier 2, F-34095 Montpellier, France

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 24期

基金：

俄罗斯基础研究基金会;

关键词：

RADIATION;

D O I：

10.1063/1.3670321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Plasmonic terahertz detection by a double-grating gate field-effect transistor structure with an asymmetric unit cell is studied theoretically. Detection responsivity exceeding 8 kV/W at room temperature in the photovoltaic response mode is predicted for strong asymmetry of the structure unit cell. This value of the responsivity is an order of magnitude greater than reported previously for the other types of uncooled plasmonic terahertz detectors. Such enormous responsivity can be obtained without using any supplementary antenna elements because the double-grating gate acts as an aerial matched antenna that effectively couples the incoming terahertz radiation to plasma oscillations in the structure channel. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3670321]

引用

页数：4

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