Minority carrier diffusion length for electrons in an extended SWIR InAs/AlSb type-II superlattice photodiode

被引：26

作者：

Cohen-Elias, D. ^{[1
]}

Snapi, N. ^{[2
]}

Klin, O. ^{[2
]}

Weiss, E. ^{[2
]}

Shusterman, S. ^{[1
]}

Meir, T. ^{[1
]}

Katz, M. ^{[1
]}

机构：

[1] Soreq NRC, Appl Phys Div, Solid State Phys Dept, IL-81800 Yavne, Israel

[2] SCD Semicond Devices, POB 2250, IL-31021 Haifa, Israel

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 20期

关键词：

DETECTORS;

D O I：

10.1063/1.5005097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated and characterized InAs/AlSb Type II superlattice photodetectors for the short wave infrared region with lambda(cutoff) close to 2.5 mu m. Using C-V and quantum efficiency measurements, we extracted the carrier diffusion lengths, L-diff, and at 220 K and 300 K, they were 0.94 mu m and 1.9 mu m, respectively. In addition, I-V and detectivity measurements were carried out. The quantum efficiencies at lambda = 2.18 mu m, -50 mV, 300 K, and 200 K were 29% and 16% and the detectivities were above 10(10) and 2 X 10(11) cm Hz(1/2)/Watt, respectively. At a bias of -50 mV, the dark current densities at 300 K and 200 K were 4 mA/cm(2) and 2.3 X 10(-6) A/cm(2) and the resistance-areas were 16 Omega cm(2) and 38 k Omega cm(2), respectively. Published by AIP Publishing.

引用

页数：4

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