Three-dimensional mapping of single-event effects using two photon absorption

被引：92

作者：

McMorrow, D ^{[1
]}

Lotshaw, WT

Melinger, JS

Buchner, S

Boulghassoul, Y

Massengill, LW

Pease, RL

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] SFA Inc, Largo, MD 20774 USA

[3] QSS Grp Inc, Seabrook, MD 20706 USA

[4] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

[5] RLP Res, Los Lunas, NM 87031 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 06期

关键词：

analog single-event effects; laser-induced single-event effects; LM124 operational amplifier; nonlinear absorption; single-event transients;

D O I：

10.1109/TNS.2003.820742

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier generation based on subbandgap two-photon absorption is used to perform three-dimensional mapping of the single-event transient response of the LM124 operational amplifier. Three classes of single-event-induced transients are observed for the input transistor Q20. A combination of experiment and transistor level modeling is used to assign the different classes, of, measured transients to charge collection across specific junctions. The large-amplitude, positive-going transients cannot be assigned to a single junction, and are identified with a collector-substrate photocurrent.

引用

收藏

页码：2199 / 2207

页数：9

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