Sol-gel processing of bismuth strontium tantalate thin films

被引：0
|
作者：
Turevskaya, EP [1 ]
Vorotilov, KA
Bergo, VB
Sokolov, SV
Sigov, AS
Benlian, D
机构：
[1] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia
[2] Moscow State Tech Univ, Moscow State Inst Radioengn Elect & Automat, Moscow 117454, Russia
[3] Univ Aix Marseille 1, Chim Coordinat Lab, F-13397 Marseille, France
来源：
JOURNAL DE PHYSIQUE IV | 1998年 / 8卷 / P9期
关键词：
D O I：
10.1051/jp4:1998914
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The synthesis of bismuth strontium tantalate thin films by alkoxide route and their ferroelectric properties were studied. It was found that single phase ferroelectric films with the thickness of 0.4-0.5 mu m could be formed by four repeated cycles of deposition of 2-ethylhexanoic acid solution of metal alkoxides on Si-SiO2-Ti-Pt wafers followed by annealing in the temperature range of 700-750 degrees C for 30 min after each deposition. The films showed remanent polarization ranging from 3.5 to 4.0 mu C/cm(2) and coercieve voltage 1.5-2.0 V.
引用
收藏
页码：83 / 86
页数：4
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