Magnetic and transport properties of magnetic wires down to 20 nm in width

被引：16

作者：

Ono, T

Ooka, Y

Kasai, S

Miyajima, H

Mibu, K

Shinjo, T

机构：

[1] Keio Univ, Fac Sci & Technol, Dept Phys, Yokohama, Kanagawa 2238522, Japan

[2] Kyoto Univ, Inst Chem Res, Uji, Kyoto 6110011, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2001年 / 226卷

关键词：

ferromagnets-nanoscale; microstructure; domain wall; Anderson localization; magnetoresistance;

D O I：

10.1016/S0304-8853(00)00617-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electric resistance measurements down to 20 mK were performed for Ni wires 20 nm in width, 20 nm in thickness and 20 mu-m in length. An increase of resistance proportional to T-1/2 was observed in a wide temperature range from 10 K to 80 mK, which is interpreted by the electron-electron interaction effect. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1831 / 1832

页数：2

共 5 条

[1]

Altshuler B., 1987, SOV SCI REV A, V9, P223

[2]

Altshuler B. L., 1985, Electron-electron interactions in disordered systems, P1

[3]

ALTSHULER BL, 1980, PHYS REV B, V22, P5141

[4] Decoherence and the Thouless crossover is one-dimensional conductors [J].