Optical and electrical properties of p-type AgInSnxS2-x (x=0-0.04) thin films prepared by spray pyrolysis

被引：9
作者：
Albor-Aguilera, ML
Cayente-Romero, JJ
Peza-Tapia, JM
De León-Gutiérrez, LR
Ortega-López, M
机构：
[1] IPN, Depto Ingn Elect SEES, CINVESTAV, Mexico City 07360, DF, Mexico
[2] IPN, ESFM, UPALM, Mexico City 07738, DF, Mexico
来源：
THIN SOLID FILMS | 2005年 / 490卷 / 02期
关键词：
AgInSnxS2-x; thin films; optical and electrical properties;
D O I：
10.1016/j.tsf.2005.04.050
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
AgInSRxS2-x (x=0-0.2) polycrystalline thin films were prepared by the spray pyrolysis technique. The samples were deposited on glass substrates at temperatures of 375 and 400 degrees C from alcoholic solutions comprising silver acetate, indium chloride, thiourea and tin chloride. All deposited films crystallized in the chalcopyrite structure of AgInS2. A p-type conductivity was detected in the Sn-doped samples deposited at 375 degrees C, otherwise they are n-type. The optical properties of AgInSnxS2-x (x < 0.2) resemble those of chalcopyrite AgInS2. Low-temperature PL measurements revealed that Sn occupying an S-site could be the responsible defect for the p-type conductivity observed in AgInSRxS2-x (x < 2) thin films. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：168 / 172
页数：5
相关论文
共 12 条
[1]   Some physical properties of chalcopyrite and orthorhombic AgInS2 thin films prepared by spray pyrolysis [J].
Aguilera, MLA ;
Ortega-López, M ;
Resendiz, VMS ;
Hernández, JA ;
Trujillo, MAG .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 102 (1-3) :380-384
[2]  
BIRKMIRE RW, 1997, P 26 IEEE PHOT SPEC, P295
[3]   Simultaneous Rietveld refinement of three phases in the Ag-In-S semiconducting system from X-ray powder diffraction [J].
Delgado, G ;
Mora, AJ ;
Pineda, C ;
Tinoco, T .
MATERIALS RESEARCH BULLETIN, 2001, 36 (13-14) :2507-2517
[4]  
GORSKA M, 1980, THIN SOLID FILMS, V67, P341, DOI 10.1016/0040-6090(80)90467-8
[5]   A CRITERION FOR APPLYING CHALCOPYRITE SEMICONDUCTORS TO OPTICAL-LINE ELIMINATION FILTERS [J].
HORINAKA, H ;
MONONOBE, S ;
YAMAMOTO, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 :109-112
[6]  
Loferski J. J., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P190
[7]   S-VACANCY ENERGY-LEVELS IN AGINS2 [J].
MASSE, G ;
REDJAI, E .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1544-1547
[8]   COMMENTS ON SYSTEM AG2S-IN2S3 [J].
ROTH, RS ;
PARKER, HS ;
BROWER, WS .
MATERIALS RESEARCH BULLETIN, 1973, 8 (03) :333-338
[9]  
Shay J., 1975, Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications
[10]   ENERGY-BANDS OF AGINS2 IN CHALCOPYRITE AND ORTHORHOMBIC STRUCTURES [J].
SHAY, JL ;
TELL, B ;
SCHIAVON.LM ;
KASPER, HM ;
THIEL, F .
PHYSICAL REVIEW B, 1974, 9 (04) :1719-1723
12