MBE growth of ferromagnetic single crystal Heusler alloys on (001)Ga1-xInxAs

被引：32

作者：

Dong, JW

Lu, J

Xie, JQ

Chen, LC

James, RD

McKernan, S

Palmstrom, CJ

机构：

[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

[2] Univ Minnesota, Dept Aerosp Engn & Mech, Minneapolis, MN 55455 USA

[3] Univ Minnesota, Ctr Interfacial Engn, Minneapolis, MN 55455 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2001年 / 10卷 / 1-3期

基金：

美国国家科学基金会;

关键词：

Heusler alloys; Ni2MnGa/GaAs; Ni2MnGe/GaAs; Ni2MnIn/InAs; MBE;

D O I：

10.1016/S1386-9477(01)00131-X

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ferromagnetic Ni2MnGa and Ni2MnCe have been grown on GaAs(0 0 1) and Ni2MnIn on InAs(0 0 1) by molecular beam epitaxy. In situ reflection high energy electron diffraction, ex situ X-ray diffraction and transmission electron microscopy selected area electron diffraction indicate the growth of pseudomorphic single crystal (0 0 1) Ni2MnGa on (0 0 1) GaAs. Superconducting quantum interference device magnetometry measurements show the films to be ferromagnetic with in-plane magnetization and Curie temperatures of similar to 340, similar to 320, and similar to 290K for Ni2MnGa, Ni2MnGe and Ni2MnIn, respectively. (C) 2001 Published by Elsevier Science B.V.

引用

页码：428 / 432

页数：5

共 17 条

[11] Strong Hall voltage modulation in hybrid ferromagnet/semiconductor microstructure [J].