Molecular spintronics

被引:1144
作者
Sanvito, Stefano [1 ,2 ]
机构
[1] Trinity Coll Dublin, Sch Phys, Dublin 2, Ireland
[2] Trinity Coll Dublin, CRANN, Dublin 2, Ireland
基金
爱尔兰科学基金会;
关键词
ROOM-TEMPERATURE; SPIN INJECTION; GIANT MAGNETORESISTANCE; MAGNETIC-ANISOTROPY; ELECTRICAL-CONDUCTIVITY; TRANSPORT; METAL; SEMICONDUCTORS; INTERFACE; RESONANCE;
D O I
10.1039/c1cs15047b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The electron spin made its debut in the device world only two decades ago but today our ability of detecting the spin state of a moving electron underpins the entire magnetic data storage industry. This technological revolution has been driven by a constant improvement in our understanding on how spins can be injected, manipulated and detected in the solid state, a field which is collectively named Spintronics. Recently a number of pioneering experiments and theoretical works suggest that organic materials can offer similar and perhaps superior performances in making spin-devices than the more conventional inorganic metals and semiconductors. Furthermore they can pave the way for radically new device concepts. This is Molecular Spintronics, a blossoming research area aimed at exploring how the unique properties of the organic world can marry the requirements of spin-devices. Importantly, after a first phase, where most of the research was focussed on exporting the concepts of inorganic spintronics to organic materials, the field has moved to a more mature age, where the exploitation of the unique properties of molecules has begun to emerge. Molecular spintronics now collects a diverse and interdisciplinary community ranging from device physicists to synthetic chemists to surface scientists. In this critical review, I will survey this fascinating, rapidly evolving, field with a particular eye on new directions and opportunities. The main differences and challenges with respect to standard spintronics will be discussed and so will be the potential cross-fertilization with other fields (177 references).
引用
收藏
页码:3336 / 3355
页数:20
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