Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (001) graded film

被引：1
|
作者：
Wang, Jun [1 ]
Heidelberger, Christopher [2 ]
Fitzgerald, Eugene A. [2 ]
Quitoriano, Nathaniel J. [1 ]
机构：
[1] McGill Univ, Dept Min & Mat Engn, Montreal, PQ H3A 0C5, Canada
[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2020年 / 535卷
基金：
加拿大自然科学与工程研究理事会;
关键词：
Silicon germanium; Liquid phase epitaxy; crystal morphology; Strain; Line defects; STRAIN RELAXATION; SI1-XGEX LAYERS; DISLOCATIONS; MORPHOLOGY; REDUCTION; SILICON; GE;
D O I：
10.1016/j.jcrysgro.2020.125541
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
SiGe films were grown on a chemical vapor deposition (CVD)-grown Si0.88Ge0.12 /Si (0 0 1) graded film with different growth solution compositions using a temperature interval of 950-940 degrees C by liquid phase epitaxy (LPE). The LPE films grown on the CVD-grown SiGe/Si (0 0 1) graded film are >= 86% relaxed, much more relaxed than those on bare Si (Wang and Quitoriano, 2019) since the existing threading dislocations in the CVD-grown SiGe/Si (0 0 1) graded film glide to create misfit dislocations without needing to nucleate new ones. The threading dislocation density of the LPE films is slightly lower than that of the CVD-grown SiGe films and on the same order of magnitude, similar to 10(6) cm(-2). Since the CVD-grown SiGe/Si (0 0 1) graded film was annealed for 4 h before the LPE growth occurred, the properties of the CVD-grown SiGe/Si (0 0 1) graded film were studied and we found that the CVD-grown SiGe/Si (0 0 1) graded film have SiGe islands appear all over the surface aligned along the <1 1 0> crosshatch morphology and become more relaxed after annealing.
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页数：8
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