Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (001) graded film

被引：1
|
作者：
Wang, Jun [1 ]
Heidelberger, Christopher [2 ]
Fitzgerald, Eugene A. [2 ]
Quitoriano, Nathaniel J. [1 ]
机构：
[1] McGill Univ, Dept Min & Mat Engn, Montreal, PQ H3A 0C5, Canada
[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2020年 / 535卷
基金：
加拿大自然科学与工程研究理事会;
关键词：
Silicon germanium; Liquid phase epitaxy; crystal morphology; Strain; Line defects; STRAIN RELAXATION; SI1-XGEX LAYERS; DISLOCATIONS; MORPHOLOGY; REDUCTION; SILICON; GE;
D O I：
10.1016/j.jcrysgro.2020.125541
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
SiGe films were grown on a chemical vapor deposition (CVD)-grown Si0.88Ge0.12 /Si (0 0 1) graded film with different growth solution compositions using a temperature interval of 950-940 degrees C by liquid phase epitaxy (LPE). The LPE films grown on the CVD-grown SiGe/Si (0 0 1) graded film are >= 86% relaxed, much more relaxed than those on bare Si (Wang and Quitoriano, 2019) since the existing threading dislocations in the CVD-grown SiGe/Si (0 0 1) graded film glide to create misfit dislocations without needing to nucleate new ones. The threading dislocation density of the LPE films is slightly lower than that of the CVD-grown SiGe films and on the same order of magnitude, similar to 10(6) cm(-2). Since the CVD-grown SiGe/Si (0 0 1) graded film was annealed for 4 h before the LPE growth occurred, the properties of the CVD-grown SiGe/Si (0 0 1) graded film were studied and we found that the CVD-grown SiGe/Si (0 0 1) graded film have SiGe islands appear all over the surface aligned along the <1 1 0> crosshatch morphology and become more relaxed after annealing.
引用
收藏
页数：8
相关论文
共 50 条
  • [31] Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate
    Ng, Tien Khee
    Yoon, Soon Fatt
    Tan, Kian Hua
    Chen, Kah Pin
    Tanoto, Hendrix
    Lew, Kim Luong
    Wicaksono, Satrio
    Loke, Wan Khai
    Dohrman, Carl
    Fitzgerald, Eugene A.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1754 - 1757
  • [32] Rutherford backscattering studies of strain-relaxed SiGe films grown on Si substrate with compositionally graded buffer layers
    Watanabe, Yoshinori
    Oshima, Ryuji
    Sakata, Isao
    Matsubara, Koji
    Sakamoto, Isao
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 205 - 207
  • [33] WINDOW LAYER PROPERTIES OF GaP FILMS GROWN ON Si BY LIQUID PHASE EPITAXY
    Huang, Susan R.
    Lu, Xuesong
    Wang, Xiaoting
    Barnett, Allen M.
    Opila, Robert L.
    PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4, 2008, : 343 - +
  • [34] Evolution and coarsening of Si-rich SiGe islands epitaxially grown at high temperatures on Si(001)
    Brehm, M.
    Grydlik, M.
    Schaeffler, F.
    Schmidt, O. G.
    MICROELECTRONIC ENGINEERING, 2014, 125 : 22 - 27
  • [35] Single-junction GaAsP solar cells grown on SiGe graded buffers on Si
    Faucher, J.
    Gerger, A.
    Tomasulo, S.
    Ebert, C.
    Lochtefeld, A.
    Barnett, A.
    Lee, M. L.
    APPLIED PHYSICS LETTERS, 2013, 103 (19)
  • [36] High-quality SiGe films grown with compositionally graded buffer layers for solar cell applications
    Oshima, Ryuji
    Watanabe, Yoshinori
    Yamanaka, Mitsuyuki
    Kawanami, Hitoshi
    Sakamoto, Isao
    Matsubara, Koji
    Sakata, Isao
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 226 - 229
  • [37] Laser-induced melting and recrystallization of CVD grown polycrystalline Si/SiGe/Ge layers
    Gaiduk, P. I.
    Prakopyeu, S. L.
    Zajkov, V. A.
    Ivlev, G. D.
    Gatskevich, E. I.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4708 - 4711
  • [38] Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001)
    Grydlik, Martyna
    Boioli, Francesca
    Groiss, Heiko
    Gatti, Riccardo
    Brehm, Moritz
    Montalenti, Francesco
    Devincre, Benoit
    Schaeffler, Friedrich
    Miglio, Leo
    APPLIED PHYSICS LETTERS, 2012, 101 (01)
  • [39] Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum well
    Tonkikh, A. A.
    Zakharov, N. D.
    Talalaev, V. G.
    Eisenschmidt, C.
    Schilling, J.
    Werner, P.
    JOURNAL OF CRYSTAL GROWTH, 2015, 425 : 172 - 176
  • [40] Structural disorder in SiGe films grown epitaxially on Si by ion beam sputter deposition
    Parnis, D
    Zolotoyabko, E
    Kaplan, WD
    Eizenberg, M
    Mosleh, N
    Meyer, F
    Schwebel, C
    THIN SOLID FILMS, 1997, 294 (1-2) : 64 - 68
12345