A comprehensive study on the effects of gamma radiation on the physical properties of a two-dimensional WS2 monolayer semiconductor

被引:35
|
作者
Felix, Jorlandio Francisco [1 ]
da Silva, Arlon Fernandes [1 ]
da Silva, Sebastiao Willam [1 ]
Qu, Fanyao [1 ]
Qiu, Bin [2 ]
Ren, Junfeng [2 ]
de Azevedo, Walter Mendes [3 ]
Henini, Mohamed [4 ]
Huang, Chung-Che [5 ]
机构
[1] Univ Brasilia, Inst Phys, Nucl Appl Phys, BR-70919970 Brasilia, DF, Brazil
[2] Shandong Normal Univ, Sch Phys & Elect, Jinan 250014, Peoples R China
[3] Univ Fed Pernambuco, Dept Quim Fundamental, BR-50670901 Recife, PE, Brazil
[4] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[5] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England
基金
英国工程与自然科学研究理事会;
关键词
TRANSITION-METAL DICHALCOGENIDES; PHOTOLUMINESCENCE;
D O I
10.1039/c9nh00414a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This article reports the effects of gamma radiation on the structural, optical and magnetic properties of monolayer tungsten disulfide (WS2) grown by a scalable van der Waals epitaxial (VdWE) process on a SiO2 coated Si substrate. We found that ionizing radiation (gamma ray) interacts strongly with two-dimensional WS2, which induces effective p-doping in the samples. As the radiation dose increases, the p-doping concentration increases substantially. In addition, in the small radiation dose regime, the WS2 monolayers exhibit usual diamagnetic behavior. However, a remarkable ferromagnetic hysteresis emerges when the WS2 monolayer is irradiated with 400 Gys. This is attributed to the presence of irradiation-induced complex vacancies composed of one tungsten and a pair of its nearby sulfurs. Moreover, these results have shown that the detector based on the large scale monolayer VdWE-grown two-dimensional WS2 is an appealing candidate for sensing high-energy photons at small radiation doses.
引用
收藏
页码:259 / 267
页数:9
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