A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues

被引:312
作者
Lee, Haksun [1 ]
Smet, Vanessa [1 ]
Tummala, Rao [1 ]
机构
[1] Georgia Inst Technol, Dept Elect & Comp Engn, Atlanta, GA 30332 USA
关键词
Silicon carbide; Multichip modules; Power electronics; Substrates; Standards; Silicon; Packaging; power module; silicon carbide (SiC); HIGH-TEMPERATURE ELECTRONICS; HIGH-FREQUENCY; DESIGN; MOSFET; SEMICONDUCTORS; RELIABILITY; CONVERTER; OPERATION; LOSSES; CELL;
D O I
10.1109/JESTPE.2019.2951801
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Power module packaging technologies have been experiencing extensive changes as the novel silicon carbide (SiC) power devices with superior performance become commercially available. This article presents an overview of power module packaging technologies in this transition, with an emphasis on the challenges that current standard packaging face, requirements that future power module packaging needs to fulfill, and recent advances on packaging technologies. The standard power module structure, which is a widely used current practice to package SiC devices, is reviewed, and the reasons why novel packaging technologies should be developed are described in this article. The packaging challenges associated with high-speed switching, thermal management, high-temperature operation, and high-voltage isolation are explained in detail. Recent advances on technologies, which try to address the limitations of standard packaging, both in packaging elements and package structure are summarized. The trend toward novel soft-switching power converters gave rise to problems regarding package designs of unconventional module configuration. Potential applications areas, such as aerospace applications, introduce low-temperature challenges to SiC packaging. Key issues in these emerging areas are highlighted.
引用
收藏
页码:239 / 255
页数:17
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