GaAs/AlGaAs photonic crystals for VCSEL-type semiconductor lasers

被引：3
作者：
Kruszka, R. [1 ]
Ekielski, M. [1 ]
Golaszewska, K. [1 ]
Korwin-Mikke, K. [1 ]
Sidor, Z. [1 ]
Wzorek, M. [1 ]
Pierscinska, D. [1 ]
Sarzala, R. [2 ]
Czyszanowski, T. [2 ]
Piotrowska, A. [1 ]
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
[2] Tech Univ Lodz, Inst Phys, PL-93005 Lodz, Poland
来源：
OPTO-ELECTRONICS REVIEW | 2011年 / 19卷 / 01期
关键词：
photonic crystals; VCSEL lasers; ICP etching; STRUCTURE OPTIMIZATION; DIODE-LASERS; MODES;
D O I：
10.2478/s11772-010-0068-x
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The results of modelling of the influence of photonic crystal on the performance of VCSEL-type semiconductor laser structure are shown and indicate that the use of those structures would significantly improve the working parameters of the devices. The method of fabrication of photonic crystals in the Bragg mirrors of GaAs/AlGaAs-based VCSELs is presented.
引用
收藏
页码：51 / 55
页数：5
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