Dry etching of surface textured zinc oxide using a remote argon-hydrogen plasma

被引：21

作者：

Groenen, R ^{[1
]}

Creatore, M ^{[1
]}

van de Sanden, MCM ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED SURFACE SCIENCE | 2005年 / 241卷 / 3-4期

关键词：

zinc oxide; surface modification; remote plasma;

D O I：

10.1016/j.apsusc.2004.07.034

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A new method for fast dry etching of inherently textured ZnO using a remote argon-hydrogen plasma created by a cascaded arc is presented, obtaining etch rates over 10 nm/s. Atomic hydrogen is considered to be the reactive species responsible for the etching process, the excess of molecular hydrogen in the gas phase does not contribute to the etching. Furthermore, using in situ spectroscopic ellipsometry (sub-) surface film modification competitive to etching is observed. (C) 2004 Published by Elsevier B.V.

引用

页码：321 / 325

页数：5

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