Preparation of high-quality CuInSe2 thin films by molecular beam epitaxy

被引：0

作者：

Tseng, BH ^{[1
]}

Lin, SB ^{[1
]}

Yang, DJ ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung 80424, Taiwan

来源：

THIN-FILM STRUCTURES FOR PHOTOVOLTAICS | 1998年 / 485卷

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

CuInSe2 epitaxial films having superior luminescence properties were prepared by using (001) GaAs substrates and then by thermal annealing in the presence of a Se-beam flux. We also found that exciton emission became dominant when the film composition was very close to the stoichiometry.

引用

页码：169 / 172

页数：4