Electric field and electron orbits near a triple point

被引:75
作者
Jordan, Nicholas M. [1 ]
Lau, Y. Y. [1 ]
French, David M. [1 ]
Gilgenbach, R. M. [1 ]
Pengvanich, P. [1 ]
机构
[1] Univ Michigan, Dept Nucl Engn & Radiol Sci, Ann Arbor, MI 48109 USA
关键词
D O I
10.1063/1.2764211
中图分类号
O59 [应用物理学];
学科分类号
摘要
Triple point, defined as the junction of metal, dielectric, and vacuum, is the location where electron emission is favored in the presence of a sufficiently strong electric field. In addition to being an electron source, the triple point is generally regarded as the location where flashover is initiated in high voltage insulation, and as the vulnerable spot from which rf breakdown is triggered. In this paper, we focus on the electric field distribution at a triple point of a general geometry, as well as the electron orbits in its immediate vicinity. We calculate the orbit of the first generation electrons, the seed electrons. It is found that, despite the mathematically divergent electric field at the triple point, significant electron yield most likely results from secondary electron emission when the seed electrons strike the dielectric. The analysis gives the voltage scale in which this electron multiplication may occur. It also provides an explanation on why certain dielectric angles are more favorable to electron generation over others, as observed in previous experiments. (c) 2007American Institute of Physics.
引用
收藏
页数:10
相关论文
共 36 条
[1]   MECHANISM OF PULSED SURFACE FLASHOVER INVOLVING ELECTRON-STIMULATED DESORPTION [J].
ANDERSON, RA ;
BRAINARD, JP .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1414-1421
[2]   ROLE OF SPACE-CHARGE IN FIELD-EMISSION CATHODES [J].
ANDERSON, WA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02) :383-386
[3]   Power deposited on a dielectric by multipactor [J].
Ang, LK ;
Lau, YY ;
Kishek, RA ;
Gilgenbach, RM .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 1998, 26 (03) :290-295
[4]  
Barker RJ., 2001, HIGH POWER MICROWAVE, DOI 10.1109/9780470544877
[5]   THEORY OF SECONDARY-ELECTRON AVALANCHE AT ELECTRICALLY STRESSED INSULATOR-VACUUM INTERFACES [J].
BERGERON, KD .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) :3073-3080
[6]  
BOOSKE JH, 2007, P 34 IEEE INT C PLAS, P350
[7]   Theoretical analysis of the enhanced electric field at the triple junction [J].
Chung, MS ;
Yoon, BG ;
Cutler, PH ;
Miskovsky, NM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03) :1240-1243
[8]   The effect of electrode contamination, cleaning and conditioning on high-energy pulsed-power device performance [J].
Cuneo, ME .
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 1999, 6 (04) :469-485
[9]   MECHANISM OF SURFACE CHARGING OF HIGH-VOLTAGE INSULATORS IN VACUUM [J].
DETOURREIL, CH ;
SRIVASTAVA, KD .
IEEE TRANSACTIONS ON ELECTRICAL INSULATION, 1973, EI 8 (01) :17-21
[10]   Thermionic emission [J].
Dushman, S .
REVIEWS OF MODERN PHYSICS, 1930, 2 (04) :0381-0476