Synthesis Characteristics and Thermoelectric Properties of the Rare-earth-doped Mg2Si System

被引：12

作者：

Kim, Kyung-Ho ^{[1
]}

Choi, Soon-Mok ^{[1
]}

Seo, Won-Seon ^{[1
]}

Kim, Il-Ho ^{[2
]}

Kim, Sun-Uk ^{[3
]}

机构：

[1] Korea Inst Ceram Engn & Technol, Green Ceram Div, Energy Mat Ctr, Seoul 153801, South Korea

[2] Chungju Natl Univ, Dept Mat Sci & Engn, Chungju 380702, South Korea

[3] Res Inst Ind Sci & Technol, Funct Mat Res Dept, Pohang 790330, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2010年 / 57卷 / 04期

关键词：

Mg2Si; Rare-earth doping; Thermoelectric; Semiconductor;

D O I：

10.3938/jkps.57.1072

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The thermoelectric materials Mg2Si and rare-earth doped Mg2Si were fabricated by using a vacuum melting method followed by spark plasma sintering (SPS). The electrical conductivity, the Seebeck coefficient, and the thermal conductivity at temperatures between 300 and 800 K were rneasured to evaluate the thermoelectric properties of Mg2Si. Their thermoelectric properties were improved with increased SPS sintering temperature. All pure and Nd-doped Mg2Si samples exhibited n-type behavior over the temperature range investigated. The Mg2Si sample that was subjected to SPS at 1123 K showed a maximum figure of merit, ZT of 0.24 at 773 K.

引用

页码：1072 / 1076

页数：5

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